IXFB100N50Q3 Datasheet - IXYS Corporation

IXFB100N50Q3 HiperFET Power MOSFET Q3-Class

Advance Technical Information HiperFETTM Power MOSFET Q3-Class N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFB100N50Q3 VDSS ID25 RDS(on) trr = = ≤ ≤ 500V 100A 49mΩ 250ns PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = .

IXFB100N50Q3 Features

* Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG High Power Density Easy to Mount Space Savings Applications z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS =

IXFB100N50Q3_IXYSCorporation.pdf