IXFB120N50P2 Datasheet - IXYS Corporation

IXFB120N50P2 PolarP2 HiPerFET Power MOSFET

Preliminary Technical Information PolarP2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB120N50P2 VDSS ID25 RDS(on) trr = = ≤ ≤ 500V 120A 43mΩ 300ns PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJ.

IXFB120N50P2 Features

* z z z z z High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(ON) Low Package Inductance Advantages z Plus 264TM Package for Clip or Spring Mounting High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified

IXFB120N50P2_IXYSCorporation.pdf