IXFB120N50P2 Datasheet - IXYS Corporation

IXFB120N50P2, PolarP2 HiPerFET Power MOSFET

Preliminary Technical Information PolarP2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB120N50P2 VD.

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IXFB120N50P2_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFB120N50P2

Manufacturer:

IXYS Corporation

File Size:

158.43 KB

Description:

PolarP2 HiPerFET Power MOSFET

Applications

* Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ± 200 V V nA z z z z z Switch-Mode and Resonant-Mode Power Su

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