Datasheet Specifications
- Part number
- IXFB120N50P2
- Manufacturer
- IXYS Corporation
- File Size
- 158.43 KB
- Datasheet
- IXFB120N50P2_IXYSCorporation.pdf
- Description
- PolarP2 HiPerFET Power MOSFET
Description
Preliminary Technical Information PolarP2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB120N50P2 VD.
Applications
* Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ± 200 V V nA z z z z z Switch-Mode and Resonant-Mode Power SuIXFB120N50P2 Distributors
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