IXFB100N50P - Power MOSFET

IXYS Corporation

IXFB100N50P Description

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB 100N50P VDSS ID25 RDS(on) trr = 500 V = 100 A.

IXFB100N50P Features

* l l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.52.7 10 Advantages l l l Plus 264TM package f

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Datasheet Details

Part number: IXFB100N50P
Manufacturer: IXYS Corporation
File Size: 152.76 KB
Datasheet: IXFB100N50P_IXYSCorporation.pdf
Description: Power MOSFET

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Power MOSFET IXYS Corporation

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