* l l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.52.7 10 Advantages l l l Plus 264TM package f
IXFB100N50P Datasheet (152.76 KB)
IXFB100N50P
IXYS Corporation
152.76 KB
Power mosfet.
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB 100N50P
VDSS ID25
RDS(on) trr
= 500 V = 100 A.
📁 Related Datasheet
IXFB100N50Q3 HiperFET Power MOSFET Q3-Class (IXYS Corporation)
IXFB110N60P3 Power MOSFET (IXYS Corporation)
IXFB120N50P2 PolarP2 HiPerFET Power MOSFET (IXYS Corporation)
IXFB132N50P3 Polar3 HiPerFET Power MOSFET (IXYS Corporation)
IXFB150N65X2 Power MOSFET (IXYS)
IXFB170N30P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFB300N10P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFB30N120P Polar HiPerFET Power MOSFET (IXYS Corporation)
IXFB38N100Q2 Power MOSFET (IXYS Corporation)
IXFB44N100P Power MOSFET (Littelfuse)
