Datasheet4U Logo Datasheet4U.com

IXFB100N50P Datasheet - IXYS Corporation

IXFB100N50P - Power MOSFET

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB 100N50P VDSS ID25 RDS(on) trr = 500 V = 100 A ≤ 49 mΩ ≤ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤

IXFB100N50P Features

* l l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.52.7 10 Advantages l l l Plus 264TM package f

IXFB100N50P_IXYSCorporation.pdf

Preview of IXFB100N50P PDF
IXFB100N50P Datasheet Preview Page 2 IXFB100N50P Datasheet Preview Page 3

Datasheet Details

Part number:

IXFB100N50P

Manufacturer:

IXYS Corporation

File Size:

152.76 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFB100N50Q3 IXFB110N60P3 IXFB120N50P2 IXFB132N50P3 IXFB150N65X2 IXFB170N30P

📌 All Tags

IXFB100N50P Power MOSFET IXYS Corporation