IXFB300N10P Datasheet, Hiperfet, IXYS Corporation

IXFB300N10P Features

• Hiperfet
• Fast intrinsic diode Avalanche Rated Low RDS(ON) and QG Low package inductance G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Advantag

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Part number:

IXFB300N10P

Manufacturer:

IXYS Corporation

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144.31kb

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📄 Datasheet

Description:

Polar power mosfet hiperfet.

IXFB300N10P Application

• Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA V

TAGS

IXFB300N10P

IXYS Corporation

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