Datasheet Specifications
- Part number
- IXFB300N10P
- Manufacturer
- IXYS Corporation
- File Size
- 144.31 KB
- Datasheet
- IXFB300N10P_IXYSCorporation.pdf
- Description
- Polar Power MOSFET HiPerFET
Description
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB300N10P VDSS .
Applications
* Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 50A, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 100 3.0 5.0 ±200 25 1.5 5.5 V V nA μA mA mΩIXFB300N10P Distributors
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