* Fast intrinsic diode Avalanche Rated Low RDS(ON) and QG Low package inductance G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Advantages z z z z Easy to mount Space savings High power density Low gate drive requirement Applications Symbol Test Con
IXFB300N10P Datasheet (144.31 KB)
IXFB300N10P
IXYS Corporation
144.31 KB
Polar power mosfet hiperfet.
Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB300N10P
VDSS .
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