IXFB300N10P Datasheet - IXYS Corporation

IXFB300N10P Polar Power MOSFET HiPerFET

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB300N10P VDSS ID25 RDS(on) trr = = ≤ ≤ 100V 300A 5.5mΩ 200ns PLUS264TM (IXFB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Leads Current Limit, RMS .

IXFB300N10P Features

* Fast intrinsic diode Avalanche Rated Low RDS(ON) and QG Low package inductance G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Advantages z z z z Easy to mount Space savings High power density Low gate drive requirement Applications Symbol Test Con

IXFB300N10P_IXYSCorporation.pdf