IXFB38N100Q2 Datasheet - IXYS Corporation

IXFB38N100Q2 Power MOSFET

www.DataSheet4U.com HiPerFETTM Power MOSFETs IXFB38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 1000 V ID25 = 38 A RDS(on)= 0.25 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Fc Weight 1.6 mm (0.063 in.) from case for 10 s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 2.

IXFB38N100Q2 Features

* z z z z Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier Applications z 30120/7.527 N/lb 10 g z z z Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise

IXFB38N100Q2_IXYSCorporation.pdf