* W °C °C °C °C °C N/lb g z z z Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.52.7 10 Advantages z z z Plus 264TM package for clip o
IXFB30N120P Datasheet (117.54 KB)
IXFB30N120P
IXYS Corporation
117.54 KB
Polar hiperfet power mosfet.
Preliminary Technical Information
PolarVHVTM HiPerFET IXFB30N120P Power MOSFET
N-Channel Enhancement Mode
VDSS = 1200 V ID25 = 30 A RDS(on) ≤ 350 mΩ.
📁 Related Datasheet
IXFB300N10P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFB38N100Q2 Power MOSFET (IXYS Corporation)
IXFB100N50P Power MOSFET (IXYS Corporation)
IXFB100N50Q3 HiperFET Power MOSFET Q3-Class (IXYS Corporation)
IXFB110N60P3 Power MOSFET (IXYS Corporation)
IXFB120N50P2 PolarP2 HiPerFET Power MOSFET (IXYS Corporation)
IXFB132N50P3 Polar3 HiPerFET Power MOSFET (IXYS Corporation)
IXFB150N65X2 Power MOSFET (IXYS)
IXFB170N30P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFB44N100P Power MOSFET (Littelfuse)
