Datasheet Specifications
- Part number
- IXFB30N120P
- Manufacturer
- IXYS Corporation
- File Size
- 117.54 KB
- Datasheet
- IXFB30N120P_IXYSCorporation.pdf
- Description
- Polar HiPerFET Power MOSFET
Description
Preliminary Technical Information PolarVHVTM HiPerFET IXFB30N120P Power MOSFET N-Channel Enhancement Mode VDSS = 1200 V ID25 = 30 A RDS(on) ≤ 350 mΩ.
Features
* W °C °C °C °C °C N/lb g z z z Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.52.7 10 Advantages z z z Plus 264TM package for clip oIXFB30N120P Distributors
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