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IXFB30N120P - Polar HiPerFET Power MOSFET

IXYS Corporation

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Datasheet Details

Part number	IXFB30N120P
Manufacturer	IXYS Corporation
File Size	117.54 KB
Description	Polar HiPerFET Power MOSFET
Datasheet	IXFB30N120P_IXYSCorporation.pdf

IXFB30N120P Product details

Features

W °C °C °C °C °C N/lb g z z z Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.52.7 10 Advantages z z z Plus 264TM package for clip or spring mounting Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 1 mA VGS = ±30 V.

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Published: May 30, 2011 |