Part number:
IXFB30N120P
Manufacturer:
IXYS Corporation
File Size:
117.54 KB
Description:
Polar hiperfet power mosfet.
IXFB30N120P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFB30N120P
Manufacturer:
IXYS Corporation
File Size:
117.54 KB
Description:
Polar hiperfet power mosfet.
IXFB30N120P, Polar HiPerFET Power MOSFET
Preliminary Technical Information PolarVHVTM HiPerFET IXFB30N120P Power MOSFET N-Channel Enhancement Mode VDSS = 1200 V ID25 = 30 A RDS(on) ≤ 350 mΩ ≤ 300 ns trr Symbol VDSS VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 1 Ω TC = 25°C Maximum Ratings 1200 ±30 ±40 30 75 10 60 3 15
IXFB30N120P Features
* W °C °C °C °C °C N/lb g z z z Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting force 300 260 30..120/7.52.7 10 Advantages z z z Plus 264TM package for clip o
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