* Fast intrinsic diode
* Avalanche Rated
* Unclamped Inductive Switching (UIS) rated
* Very low Rth results high power dissipation
* Low RDS(ON) and QG
* Low package inductance G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Symbol Test Condi
IXFB170N30P Datasheet (145.46 KB)
IXFB170N30P
IXYS Corporation
145.46 KB
Polar power mosfet hiperfet.
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB170N30P VDSS .
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