IXFB170N30P Datasheet - IXYS Corporation

IXFB170N30P Polar Power MOSFET HiPerFET

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB170N30P VDSS ID25 RDS(on) trr = = ≤ ≤ 300V 170A 18mΩ 200ns PLUS264TM (IXFB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Leads Current Limit, RMS T.

IXFB170N30P Features

* Fast intrinsic diode

* Avalanche Rated

* Unclamped Inductive Switching (UIS) rated

* Very low Rth results high power dissipation

* Low RDS(ON) and QG

* Low package inductance G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Symbol Test Condi

IXFB170N30P_IXYSCorporation.pdf