IXFB170N30P Datasheet - IXYS Corporation

IXFB170N30P, Polar Power MOSFET HiPerFET

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB170N30P VDSS .

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IXFB170N30P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFB170N30P

Manufacturer:

IXYS Corporation

File Size:

145.46 KB

Description:

Polar Power MOSFET HiPerFET

Features

* Fast intrinsic diode
* Avalanche Rated
* Unclamped Inductive Switching (UIS) rated
* Very low Rth results high power dissipation
* Low RDS(ON) and QG
* Low package inductance G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Symbol Test Condi

Applications

* V 4.5 ±200 TJ = 125°C 25 1.5 18 V nA μA mA mΩ
* DC-DC coverters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* AC and DC motor control
* Uninterrupted power supplies
* High speed power switching applications

IXFB170N30P Distributors

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IXFB170N30P Polar Power MOSFET HiPerFET IXYS Corporation

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