Datasheet Details
- Part number
- IXFB170N30P
- Manufacturer
- IXYS Corporation
- File Size
- 145.46 KB
- Datasheet
- IXFB170N30P_IXYSCorporation.pdf
- Description
- Polar Power MOSFET HiPerFET
IXFB170N30P Description
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB170N30P VDSS .
IXFB170N30P Features
* Fast intrinsic diode
* Avalanche Rated
* Unclamped Inductive Switching (UIS) rated
* Very low Rth results high power dissipation
* Low RDS(ON) and QG
* Low package inductance
G D
(TAB)
S
G = Gate S = Source
D = Drain TAB = Drain
Symbol Test Condi
IXFB170N30P Applications
* V 4.5 ±200 TJ = 125°C 25 1.5 18 V nA μA mA mΩ
* DC-DC coverters
* Battery chargers
* Switched-mode and resonant-mode power supplies
* DC choppers
* AC and DC motor control
* Uninterrupted power supplies
* High speed power switching applications
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