IXFH20N100P Polar Power MOSFET HiPerFET

IXYS Corporation

Description

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

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Datasheet Specifications

Part number: IXFH20N100P
Manufacturer: IXYS Corporation
File Size: 134.72 KB
Datasheet: IXFH20N100P_IXYSCorporation.pdf
Description: Polar Power MOSFET HiPerFET

Features

* z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS,

Applications

* z z 25 μA 1.5 mA 470 570 mΩ z z z VGS = 10V, ID = 0.5
* ID25, Note 1 Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls www. DataSheet4U. net © 2008 IXYS CORPORATION, All rights reserved DS99843B(04/08) I

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IXFH20N100P Polar Power MOSFET HiPerFET IXYS Corporation

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