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IXFH20N100P - Polar Power MOSFET HiPerFET

IXYS Corporation

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Datasheet Details

Part number	IXFH20N100P
Manufacturer	IXYS Corporation
File Size	134.72 KB
Description	Polar Power MOSFET HiPerFET
Datasheet	IXFH20N100P_IXYSCorporation.pdf

IXFH20N100P Product details

Features

z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 200 V V nA z Easy to mount Space savings High power density.

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Published: May 30, 2011 |