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IXFH20N100P Datasheet - IXYS Corporation

Polar Power MOSFET HiPerFET

IXFH20N100P Features

* z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS,

IXFH20N100P Datasheet (134.72 KB)

Preview of IXFH20N100P PDF

Datasheet Details

Part number:

IXFH20N100P

Manufacturer:

IXYS Corporation

File Size:

134.72 KB

Description:

Polar power mosfet hiperfet.
PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD T.

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IXFH20N100P Polar Power MOSFET HiPerFET IXYS Corporation

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