IXFH20N60Q Datasheet - IXYS Corporation

IXFH20N60Q, HiPerFET Power MOSFETs Q-Class

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances IXFH 20N60Q IXFT 20N60Q VD.

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IXFH20N60Q_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH20N60Q

Manufacturer:

IXYS Corporation

File Size:

163.86 KB

Description:

HiPerFET Power MOSFETs Q-Class

Features

* z 1.13/10 Nm/lb. in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 600 2.0 4.5 ±100 25 1 0.35 V

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IXFH20N60Q HiPerFET Power MOSFETs Q-Class IXYS Corporation

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