* z 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 600 2.0 4.5 ±100 25 1 0.35 V
IXFH20N60Q Datasheet (163.86 KB)
IXFH20N60Q
IXYS Corporation
163.86 KB
Hiperfet power mosfets q-class.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances IXFH 20N60Q IXFT 20N60Q VD.
📁 Related Datasheet
IXFH20N60 (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)
IXFH20N60 Power MOSFET (IXYS Corporation)
IXFH20N100P Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFH20N50P3 Power MOSFET (IXYS)
IXFH20N80P PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFH20N80Q Power MOSFET (IXYS Corporation)
IXFH20N85X Power MOSFET (IXYS)
IXFH20N85X N-Channel MOSFET (INCHANGE)
IXFH21N50 Power MOSFET (IXYS Corporation)
IXFH21N50F HiPerRF Power MOSFETs (IXYS Corporation)
