IXFH20N80P Datasheet - IXYS Corporation

IXFH20N80P, PolarHV HiPerFET Power MOSFET

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV 20N80P 20N80P 20N80P 20N80PS VD.

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IXFH20N80P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFH20N80P

Manufacturer:

IXYS Corporation

File Size:

342.02 KB

Description:

PolarHV HiPerFET Power MOSFET

Features

* D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ± 200 25 1000 520 V V nA µA µ

IXFH20N80P Distributors

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IXFH20N80P PolarHV HiPerFET Power MOSFET IXYS Corporation

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