IXFH20N80P - PolarHV HiPerFET Power MOSFET

IXYS Corporation

Datasheet Details

Part number	IXFH20N80P
Manufacturer	IXYS Corporation
File Size	342.02 KB
Description	PolarHV HiPerFET Power MOSFET
Datasheet	IXFH20N80P_IXYSCorporation.pdf

D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ± 200 25 1000 520 V V nA µA µA mΩ l l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID =.

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Published: May 30, 2011 |