IXFH22N55 Datasheet - IXYS

IXFH22N55 HiPerFET Power MOSFET

HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH 22 N55 VDSS ID (cont) RDS(on) trr .

IXFH22N55 Features

* International standard packages JEDEC TO-247 AD

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance (< 5 nH) - easy to drive and to protect

* Fast intrinsic Rect

IXFH22N55_IXYS.pdf