IXFH22N55 HiPerFET Power MOSFET

IXYS

Description

HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/.

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Datasheet Specifications

Part number: IXFH22N55
Manufacturer: IXYS
File Size: 69.29 KB
Datasheet: IXFH22N55_IXYS.pdf
Description: HiPerFET Power MOSFET

Features

* International standard packages JEDEC TO-247 AD
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance (< 5 nH) - easy to drive and to protect
* Fast intrinsic Rect

Applications

* 1.13/10 Nm/lb. in. 6 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 550 2 4.5 ±100 TJ = 25°C TJ = 125°C 250 1 0.27 V V nA mA mA W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8

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IXFH22N55 HiPerFET Power MOSFET IXYS

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