* International standard packages JEDEC TO-247 AD
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance (< 5 nH) - easy to drive and to protect
* Fast intrinsic Rect
IXFH22N55 Datasheet (69.29 KB)
IXFH22N55
IXYS
69.29 KB
Hiperfet power mosfet.
HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr
Preliminary data
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/.
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