Part number:
IXFH22N55
Manufacturer:
IXYS
File Size:
69.29 KB
Description:
Hiperfet power mosfet.
Datasheet Details
Part number:
IXFH22N55
Manufacturer:
IXYS
File Size:
69.29 KB
Description:
Hiperfet power mosfet.
IXFH22N55, HiPerFET Power MOSFET
HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFH 22 N55 VDSS ID (cont) RDS(on) trr
IXFH22N55 Features
* International standard packages JEDEC TO-247 AD
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance (< 5 nH) - easy to drive and to protect
* Fast intrinsic Rect
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