IXFH22N60P - PolarHV HiPerFET Power MOSFETs

IXYS

Datasheet Details

Part number	IXFH22N60P
Manufacturer	IXYS
File Size	131.33 KB
Description	PolarHV HiPerFET Power MOSFETs
Datasheet	IXFH22N60P_IXYS.pdf

z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 25 250 330 V V nA µA µA mΩ Advantages z Easy to mount z Space savings z High power density V.

📁 IXFH22N60P Similar Datasheet

IXFH22N60P3 - Polar3 HiperFET Power MOSFETs (IXYS Corporation)
IXFH220N06T3 - N-Channel MOSFET (INCHANGE)
IXFH20N100P - Polar Power MOSFET HiPerFET (IXYS Corporation)
IXFH20N60 - (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)
IXFH20N60Q - HiPerFET Power MOSFETs Q-Class (IXYS Corporation)
IXFH20N80P - PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFH20N80Q - Power MOSFET (IXYS Corporation)
IXFH21N50 - Power MOSFET (IXYS Corporation)

Other Datasheets by IXYS

Published: Jun 6, 2010 |