IXFT18N90P Datasheet - IXYS Corporation

IXFT18N90P Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 18A 600mΩ 300ns TO-247 (IXFH) G D S D (TAB) TO-268 (IXFT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 TO-268 PLUS220 types Test Conditions TJ = 25°C to 15.

IXFT18N90P Features

* z z z z G S D (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV_S) G S D (TAB) D = Drain TAB = Drain International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Diode Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS

IXFT18N90P Datasheet (216.98 KB)