IXFZ140N25T Datasheet - IXYS Corporation

IXFZ140N25T GigaMOS HiperFET Power MOSFET

Advance Technical Information GigaMOSTM HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFZ140N25T VDSS ID25 = = RDS(on) ≤ ≤ trr 250V 100A 17mΩ 200ns D DE475 D D Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ .

IXFZ140N25T Features

* z 50/60 Hz, RMS IISOL ≤ 1mA www.DataSheet4U.net t = 1 minute t = 1 second 2500 3000 300 260 20..120 / 4.5..27 3 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increase

IXFZ140N25T_IXYSCorporation.pdf