IXFZ520N075T2 TrenchT2 GigaMOS HiperFET Power MOSFET

IXYS Corporation

Description

Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fas.

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Datasheet Specifications

Part number: IXFZ520N075T2
Manufacturer: IXYS Corporation
File Size: 219.98 KB
Datasheet: IXFZ520N075T2_IXYSCorporation.pdf
Description: TrenchT2 GigaMOS HiperFET Power MOSFET

Features

* z 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 2500 3000 300 260 2500 20..120 / 4.5..27 3 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Incr

Applications

* z z z 10 μA 1.5 mA 1.3 mΩ DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications VGS = 10V, ID = 100A, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved DS100250(03/10) IXFZ520N075T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Cis

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IXFZ520N075T2 TrenchT2 GigaMOS HiperFET Power MOSFET IXYS Corporation

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