IXFZ520N075T2 Datasheet - IXYS Corporation

IXFZ520N075T2 TrenchT2 GigaMOS HiperFET Power MOSFET

Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg VISOL TL TSOLD VISOL FC Weight www.DataSheet4U.net IXFZ520N075T2 VDSS ID25 = = RDS(on) ≤ 75V 465A 1.3mΩ DE475 D D D Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC =.

IXFZ520N075T2 Features

* z 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 2500 3000 300 260 2500 20..120 / 4.5..27 3 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Incr

IXFZ520N075T2_IXYSCorporation.pdf