IXGA4N100 Datasheet - IXYS Corporation

IXGA4N100 Power MOSFET

www.DataSheet4U.com Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 VCES = 1000 V IC25 = 8A VCE(sat) = 2.7 V Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 120 W Clamped inductive load TC = 25°C Maximum Ratings 1000 1000 ± 20 ± 30 8 4 16 ICM = 8 @ 0.8 VCES 40 -55 +150 150 -55 +150 300 W °C °C °C °C Feat.

IXGA4N100 Features

* V V V V A A A A G E C (TAB) G CE TO-220AB (IXGP) TO-263 AA (IXGA) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 4 2 g g International High

IXGA4N100_IXYSCorporation.pdf