* z z z z Optimized for low switching losses Square RBSOA High current handling capability International standard packages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C Characteristic Values Min.
IXGA42N30C3 Datasheet (195.47 KB)
IXGA42N30C3
IXYS Corporation
195.47 KB
Genx3 300v igbt.
GenX3TM 300V IGBT IXGA42N30C3
High Speed PT IGBTs for 50-150kHz switching
IXGH42N30C3 IXGP42N30C3
VCES IC110 VCE(sat) tfi typ
= = ≤ =
300V 42A 1.8.
📁 Related Datasheet
IXGA48N60A3 GenX3 600V IGBT (IXYS Corporation)
IXGA48N60B3 GenX3 600V IGBT (IXYS Corporation)
IXGA48N60C3 GenX3 600V IGBT (IXYS Corporation)
IXGA4N100 Power MOSFET (IXYS Corporation)
IXGA10N60 High speed IGBT (IXYS Corporation)
IXGA10N60A High speed IGBT (IXYS Corporation)
IXGA12N100 IGBT (IXYS Corporation)
IXGA12N100A IGBT (IXYS Corporation)
IXGA12N100AU1 IGBT (IXYS Corporation)
IXGA12N100U1 IGBT (IXYS Corporation)
