IXGA7N60BD1 HiPerFAST IGBT

IXYS Corporation

Description

Advanced Technical Information HiPerFASTTM IGBT with Diode IXGA 7N60BD1 IXGP 7N60BD1 VCES IC25 VCE(sat) tfi = 600 V = 14 A = 2.0 V = 150ns Symbol.

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Datasheet Specifications

Part number: IXGA7N60BD1
Manufacturer: IXYS Corporation
File Size: 99.75 KB
Datasheet: IXGA7N60BD1_IXYSCorporation.pdf
Description: HiPerFAST IGBT

Features

* G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md www. DataSheet4U. net
* International standard packages 0.45/4 Nm/lb. in. 0.55/5 Nm/lb. in. 4 2 g g JEDEC TO-263 surface mountable and JEDEC TO-220 AB

Applications

* Mounting torque, (TO-220) TO-220 TO-263 Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 5.5 100 750 ±100 1.8 2.0 V V µA µA nA V
* Uninterruptible power supplies (UPS)
* Switched-mode and resonant-mode

IXGA7N60BD1 Distributors

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IXGA7N60BD1 HiPerFAST IGBT IXYS Corporation

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