IXGH15N120C, IXGT15N120C Datasheet - IXYS Corporation

IXGH15N120C IGBT Lightspeed Series

IGBT Lightspeed Series Preliminary data Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load TC = 25°C IXGH 15N120C IXGT 15N120C VCES = 1200 V = 30 A IC25 VCE(sat) = 3.8 V tfi(typ) = 115 ns Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 40 @ 0.8 VCES 150 -55 +150 150 -55 +150.

IXGH15N120C Features

* International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD

* Low switching losses

* MOS Gate turn-on - drive simplicity Applications 1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specif

IXGT15N120C_IXYSCorporation.pdf