* International standard package JEDEC TO-247 AD
* 2nd generation HDMOSTM process
* Low VCE(sat) - for low on-state conduction losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Voltage rating guaranteed at high temperatu
IXGH12N100 Datasheet (100.30 KB)
IXGH12N100
IXYS
100.30 KB
High speed igbt.
Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 IXGH 12N100A VCES 1000 V 1000 V I V C25 CE(sat) 24 A 3.5 V 24 A 4.0 V Symbol Test Conditions VCE.
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