IXGH12N100U1 Datasheet - IXYS Corporation

IXGH12N100U1 IGBT

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Pack IXGH 12N100U1 IXGH 12N100AU1 VCES I V C25 CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V Symbol Test Conditions VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient T C = 25°C T C = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH PC TC = 25°C TJ TJM Tstg Md Weight Mounting torque with screw M3 Maximum l.

IXGH12N100U1 Features

* International standard packages JEDEC TO-247

* IGBT with antiparallel FRED in one package

* HDMOSTM process

* Low VCE(sat) - for minimum on-state conduction losses

* MOS Gate turn-on - drive simplicity

* Fast Recovery Expitaxial Diode (FRED) - soft r

IXGH12N100U1_IXYSCorporation.pdf