IXGH12N100A, IXGH12N100 Datasheet - IXYS

IXGH12N100A - High Speed IGBT

Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 IXGH 12N100A VCES 1000 V 1000 V I V C25 CE(sat) 24 A 3.5 V 24 A 4.0 V Symbol Test Conditions VCES VCGR VGES V GEM IC25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH PC T J TJM Tstg Md Weight TC = 25°C Mounting torque (M3) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case.

IXGH12N100A Features

* International standard package JEDEC TO-247 AD

* 2nd generation HDMOSTM process

* Low VCE(sat) - for low on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Voltage rating guaranteed at high temperatu

IXGH12N100-IXYS.pdf