IXGH12N100A High Speed IGBT
Low VCE(sat) IGBT High Speed IGBT IXGH 12N100 IXGH 12N100A VCES 1000 V 1000 V I V C25 CE(sat) 24 A 3.5 V 24 A 4.0 V Symbol Test Conditions VCES VCGR VGES V GEM IC25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH PC T J TJM Tstg Md Weight TC = 25°C Mounting torque (M3) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case.
IXGH12N100A Features
* International standard package
JEDEC TO-247 AD
* 2nd generation HDMOSTM process
* Low VCE(sat)
- for low on-state conduction losses
* High current handling capability
* MOS Gate turn-on
- drive simplicity
* Voltage rating guaranteed at high
temperatu