IXGH12N60CD1 Datasheet - IXYS Corporation

IXGH12N60CD1 IGBT

HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60CD1 VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 300 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 +150 150 -55 +150 V V V V A A .

IXGH12N60CD1 Features

* l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l Very high frequency IGBT New generation HDMOSTM process International standard package JEDEC TO-247AD High peak current handling capability Symbol Test Conditions Characteristic Values (TJ = 25°C, unless other

IXGH12N60CD1_IXYSCorporation.pdf