Part number:
IXGH12N60CD1
Manufacturer:
IXYS Corporation
File Size:
61.05 KB
Description:
Igbt
Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
---|---|---|---|---|---|---|---|---|
![]() |
IXYS Corporation | IXGH12N60CD1 | IGBT 600V 24A TO-247AD | DigiKey | 0 | 0 |
$0
|
🛒 Buy Now |
IXGH12N60CD1 Datasheet (61.05 KB)
IXGH12N60CD1
IXYS Corporation
61.05 KB
Igbt
* l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l Very high frequency IGBT New generation HDMOSTM process International standard package JEDEC TO-247AD High peak current handling capability Symbol Test Conditions Characteristic Values (TJ = 25°C, unless other
📁 Related Datasheet
IXGH12N60C - IGBT
(IXYS)
HiPerFASTTM IGBT LightspeedTM Series
IXGH 12N60C
VCES = 600 V
IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns
Symbol
Test Conditions
VCES VCGR
V GE.
IXGH12N60B - HiPerFAST IGBT
(IXYS Corporation)
..
HiPerFASTTM IGBT
IXGH 12N60B
Preliminary data
VDSS = 600 ID25 = 24 VCE(SAT) = 2.1 tfi(typ) = 120
V A V ns
Symbol VCES VCGR V.
IXGH12N60BD1 - HiPerFAST IGBT
(IXYS Corporation)
..
HiPerFASTTM IGBT
IXGH 12N60BD1
VDSS ID25
VCE(sat)
tfi(typ)
Preliminary data
= 600 V = 24 A = 2.1 V = 120 ns
Symbol VCES VCGR.
IXGH12N100 - High Speed IGBT
(IXYS)
Low VCE(sat) IGBT High Speed IGBT
IXGH 12N100 IXGH 12N100A
VCES
1000 V 1000 V
I V C25
CE(sat)
24 A 3.5 V 24 A 4.0 V
Symbol
Test Conditions
VCE.
IXGH12N100A - High Speed IGBT
(IXYS)
Low VCE(sat) IGBT High Speed IGBT
IXGH 12N100 IXGH 12N100A
VCES
1000 V 1000 V
I V C25
CE(sat)
24 A 3.5 V 24 A 4.0 V
Symbol
Test Conditions
VCE.
IXGH12N100AU1 - IGBT
(IXYS Corporation)
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
Combi Pack
IXGH 12N100U1 IXGH 12N100AU1
VCES
I V C25
CE(sat)
1000 V 24 A 3.5 V 1000 V 24 .