IXGH16N60B2D1 Datasheet - IXYS Corporation

IXGH16N60B2D1 HiPerFAST IGBTs

HiPerFASTTM IGBTs B2-Class High Speed w/ Diode IXGA16N60B2D1 IXGP16N60B2D1 IXGH16N60B2D1 VCES = IC110 = VCE(sat) ≤ tfi(typ) = 600V 16A 1.95V 70ns TO-263 AA (IXGA) Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 600 V 600 V ±20 V ±30 V TC = 25°C (Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TJ = 125°C, RG = 22Ω.

IXGH16N60B2D1 Features

* z Optimized for Low Conduction and Switching Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Ma

IXGH16N60B2D1 Datasheet (269.15 KB)