IXGK60N60B2D1, IXGX60N60B2D1 Datasheet - IXYS Corporation

IXGK60N60B2D1 HiPerFAST IGBT

www.DataSheet4U.com Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE(sat) tfi(typ) = 600 V = 75 A < 1.8 V = 100 ns Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10.

IXGK60N60B2D1 Features

* Square RBSOA

* High current handling capability

* MOS Gate turn-on for drive simplicity

* Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications

* Switch-mode and resonant-mode power supplies

* Uninterruptible power supplies

IXGX60N60B2D1_IXYSCorporation.pdf