IXGK60N60C2D1 Datasheet - IXYS

IXGK60N60C2D1 IGBT

HiPerFASTTM IGBT with Diode IXGK 60N60C2D1 IXGX 60N60C2D1 C2-Class High Speed IGBTs V I CES VC25 t CE(sat) fi(typ) = 600 V = 75 A = 2.5 V = 35 ns Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) PC TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Mounting torque, .

IXGK60N60C2D1 Features

* Very high frequency IGBT and anti-parallel FRED in one package

* Square RBSOA

* High current handling capability

* MOS Gate turn-on for drive simplicity

* Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications

* Switch-mode

IXGK60N60C2D1-IXYS.pdf