* International standard packages 2nd generation HDMOSTM process Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Voltage rating guaranteed at high temperature (125°C) l l l l l l BVCES VGE(th) ICES I GES VCE(sat) IC IC = 250 µA,
IXGM30N60 Datasheet (82.71 KB)
IXGM30N60
IXYS Corporation
82.71 KB
Low vce(sat) igbt.
VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V www.DataSheet4U.com Symbo.
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