IXGP12N100U1, IXGA12N100AU1 Datasheet - IXYS Corporation

IXGP12N100U1 - IGBT

www.DataSheet4U.com IGBT Combi Pack Preliminary Data Sheet VCES IXGA/IXGP12N100U1 IXGA/IXGP12N100AU1 1000 V 1000 V IC25 24 A 24 A VCE(sat) 3.5 V 4.0 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 24 12 48 ICM = 24 @ 0.8 V

IXGP12N100U1 Features

* International standard packages JEDEC TO-220AB and TO-263AA

* IGBT with antiparallel FRED in one package

* Second generation HDMOSTM process

* Low VCE(sat) - for minimum on-state conduction losses

* MOS Gate turn-on - drive simplicity

* Fast Recovery

IXGA12N100AU1_IXYSCorporation.pdf