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IXGP4N100, IXGA4N100 Datasheet - IXYS Corporation

IXGP4N100, IXGA4N100, Power MOSFET

www.DataSheet4U.com Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 VCES = 1000 V IC25 = 8A VCE(sat) = 2.7 V Symbol VCES VCGR VGES VGEM.
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IXGA4N100_IXYSCorporation.pdf

This datasheet PDF includes multiple part numbers: IXGP4N100, IXGA4N100. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXGP4N100, IXGA4N100

Manufacturer:

IXYS Corporation

File Size:

133.37 KB

Description:

Power MOSFET

Note:

This datasheet PDF includes multiple part numbers: IXGP4N100, IXGA4N100.
Please refer to the document for exact specifications by model.

Features

* V V V V A A A A G E C (TAB) G CE TO-220AB (IXGP) TO-263 AA (IXGA) Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263 0.45/4 Nm/lb. in. 0.55/5 Nm/lb. in. 4 2 g g • International • High

Applications

* standard packages JEDEC TO-220AB and TO-263AA Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVCES VGE(th) I CES IC = 250 mA, VGE = 0 V IC = 100 mA, VCE = VGE VCE= 0.8 • VCES VGE = 0 V I GES VCE(sat) VCE = 0 V, VGE = ±20 V IC = ICE90, VGE = 15V Min. 1000 2.5 TJ = 25°C TJ = 125°C

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