IXZ4DF12N100 Datasheet (IXYS Corporation)

IXZ4DF12N100, RF Power MOSFET&DRIVER

The IXZ4DF12N100 is a CMOS high speed high current gate driver and a MOSFET combination specifically designed Class D, E, HF, RF applications at up to 40MHz, as well as other applications.

The IXZ4DF12N100 in pulse mode can provide 72A of peak current while producing voltage rise and fall times of l

IXZ4DF12N100 Features

* Isolated Substrate

* high isolation voltage (>2500V)

* excellent thermal transfer

* Increased temperature and power cycling capability

* IXYS advanced Z-MOS process

* Low RDS(on)

* Very low insertion inductance (