IXZ4DF18N50 RF Power MOSFET&DRIVER

IXYS Corporation

Description

www.DataSheet.co.kr IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver match.
The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET combination specifically designed Class D and E HF RF applications at up.

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Datasheet Specifications

Part number: IXZ4DF18N50
Manufacturer: IXYS Corporation
File Size: 303.38 KB
Datasheet: IXZ4DF18N50_IXYSCorporation.pdf
Description: RF Power MOSFET&DRIVER

Features

* Isolated substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power cycling capability
* IXYS advanced Z-MOS process
* Low Rds(ON)
* Very low insertion inductance(

Applications

* Advantages
* Optimized for RF and high speed
* Easy to mount
* no insulators needed
* High power density
* Single package reduces size and heat sink area
* Class D or E Switching Amplifier
* Multi MHz Switch Mode Power Supplies (SMPS) 500 Volts 1

IXZ4DF18N50 Distributors

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IXZ4DF18N50 Power MOSFET &DRIVER IXYS Corporation

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