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IXZ4DF18N50 Datasheet - IXYS Corporation

RF Power MOSFET&DRIVER

IXZ4DF18N50 Features

* Isolated substrate

* high isolation voltage (>2500V)

* excellent thermal transfer

* Increased temperature and power cycling capability

* IXYS advanced Z-MOS process

* Low Rds(ON)

* Very low insertion inductance(

IXZ4DF18N50 General Description

The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET combination specifically designed Class D and E HF RF applications at up to 40MHz, as well as other applications. The IXZ4DF18N50 in pulse mode can provide 95A of peak current while producing voltage rise and fall times of.

IXZ4DF18N50 Datasheet (303.38 KB)

Preview of IXZ4DF18N50 PDF

Datasheet Details

Part number:

IXZ4DF18N50

Manufacturer:

IXYS Corporation

File Size:

303.38 KB

Description:

Rf power mosfet&driver.
www.DataSheet.co.kr IXZ4DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with IXZ318N50 MOSFET Gate driver match.

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IXZ4DF18N50 Power MOSFET &DRIVER IXYS Corporation

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