IXZ4DF18N50 Datasheet - IXYS Corporation

IXZ4DF18N50 RF Power MOSFET&DRIVER

The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET combination specifically designed Class D and E HF RF applications at up to 40MHz, as well as other applications. The IXZ4DF18N50 in pulse mode can provide 95A of peak current while producing voltage rise and fall times of.

IXZ4DF18N50 Features

* Isolated substrate

* high isolation voltage (>2500V)

* excellent thermal transfer

* Increased temperature and power cycling capability

* IXYS advanced Z-MOS process

* Low Rds(ON)

* Very low insertion inductance(

IXZ4DF18N50 Datasheet (303.38 KB)

IXZ4DF18N50 Datasheet Preview — Preview of IXZ4DF18N50 PDF

Datasheet Details

Part number:

IXZ4DF18N50

Manufacturer:

IXYS Corporation

File Size:

303.38 KB

Description:

Rf power mosfet&driver.

📁 Related Datasheet

IXZ4DF12N100 RF Power MOSFET&DRIVER (IXYS Corporation)

IXZ-2020 2 Axis MEMS gyroscope (InvenSense)

IXZ12210N50L RF Power MOSFET (IXYS Corporation)

IXZ210N50L N-Channel Linear 175MHz RF MOSFET (IXYS Corporation)

IXZ2210N50L N-Channel Linear 175MHz RF MOSFET (IXYS Corporation)

IXZ308N120 Z-MOS RF Power MOSFET (IXYS Corporation)

IXZ316N60 600V (max) Switch-Mode MOSFETS (IXYS Corporation)

IXZ318N50 500V (max) Switch-Mode MOSFETS (IXYS Corporation)

TAGS

IXZ4DF18N50 Power MOSFET &DRIVER IXYS Corporation

IXZ4DF18N50 Distributor