IXZ4DF18N50 Datasheet (IXYS Corporation)

IXZ4DF18N50, RF Power MOSFET&DRIVER

The IXZ4DF18N50 is a CMOS high speed high current gate driver and ZMOS MOSFET combination specifically designed Class D and E HF RF applications at up to 40MHz, as well as other applications.

The IXZ4DF18N50 in pulse mode can provide 95A of peak current while producing voltage rise and fall times of

IXZ4DF18N50 Features

* Isolated substrate

* high isolation voltage (>2500V)

* excellent thermal transfer

* Increased temperature and power cycling capability

* IXYS advanced Z-MOS process

* Low Rds(ON)

* Very low insertion inductance(