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IXZH10N50LB, IXZH10N50LA Datasheet - IXYS

IXZH10N50LB RF Power MOSFET

IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation in Common Source Mode VDSS ID25 = 500 V = 10 A Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Maximum Ratings 500 V 5.

IXZH10N50LB Features

* nA

* IXYS RF Low Capacitance Z-MOSTM Process µA

* Very low insertion inductance (

IXZH10N50LA-IXYS.pdf

This datasheet PDF includes multiple part numbers: IXZH10N50LB, IXZH10N50LA. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXZH10N50LB, IXZH10N50LA

Manufacturer:

IXYS

File Size:

255.92 KB

Description:

Rf power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXZH10N50LB, IXZH10N50LA.
Please refer to the document for exact specifications by model.

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IXZH10N50LB IXZH10N50LA Power MOSFET IXYS

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