IXZH10N50LB Datasheet - IXYS

IXZH10N50LB RF Power MOSFET

IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation in Common Source Mode VDSS ID25 = 500 V = 10 A Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Maximum Ratings 500 V 5.

IXZH10N50LB Features

* nA

* IXYS RF Low Capacitance Z-MOSTM Process µA

* Very low insertion inductance (

IXZH10N50LB Datasheet (255.92 KB)