* min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm(0.063 in) from case for 10 s VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C typ. max. V 6.5 ±100 50 1 V nA µA mA Ω S +175 °C °C + 175 °C °C g 1200 3.5
* Isolated
IXZ308N120 Datasheet (179.45 KB)
IXZ308N120
IXYS Corporation
179.45 KB
Z-mos rf power mosfet.
IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RF RF MOSFET MOSFET Lo Capacitance Low Capacitance Z-MOS Z-MOS M.
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