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IXZ308N120 - Z-MOS RF Power MOSFET

IXYS Corporation

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Datasheet Details

Part number	IXZ308N120
Manufacturer	IXYS Corporation
File Size	179.45 KB
Description	Z-MOS RF Power MOSFET
Datasheet	IXZ308N120_IXYSCorporation.pdf

IXZ308N120 Product details

Features

min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm(0.063 in) from case for 10 s VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C typ. max. V 6.5 ±100 50 1 V nA µA mA Ω S +175 °C °C + 175 °C °C g 1200 3.5.
Isolated Substrate.
high isolation voltage (>2500V).
excellent thermal transfer.
Increased temperature and power.

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Published: Oct 29, 2009 |