IXZ308N120 Z-MOS RF Power MOSFET

IXYS Corporation

Description

IXZ308N120 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Linear Switch 175MHz Mode RF RF MOSFET MOSFET Lo Capacitance Low Capacitance Z-MOS Z-MOS M.

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Datasheet Specifications

Part number: IXZ308N120
Manufacturer: IXYS Corporation
File Size: 179.45 KB
Datasheet: IXZ308N120_IXYSCorporation.pdf
Description: Z-MOS RF Power MOSFET

Features

* min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm(0.063 in) from case for 10 s VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C typ. max. V 6.5 ±100 50 1 V nA µA mA Ω S +175 °C °C + 175 °C °C g 1200 3.5
* Isolated

Applications

* & Communications Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS =

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IXZ308N120 Z-MOS Power MOSFET IXYS Corporation

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