* 0.83 1.00 min. 0.42 0.50 typ.
* IXYS RF Low Capacitance Z-MOSTM Process VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C 500 3.5 4.83 6.5 ±100 50 1 1.0 3.8 -55 +175 +175 -55
IXZ12210N50L Datasheet (336.20 KB)
IXZ12210N50L
IXYS Corporation
336.20 KB
Rf power mosfet.
IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation .
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