IXZ12210N50L RF Power MOSFET

IXYS Corporation

Description

IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation .

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Datasheet Specifications

Part number: IXZ12210N50L
Manufacturer: IXYS Corporation
File Size: 336.20 KB
Datasheet: IXZ12210N50L_IXYSCorporation.pdf
Description: RF Power MOSFET

Features

* 0.83 1.00 min. 0.42 0.50 typ.
* IXYS RF Low Capacitance Z-MOSTM Process VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C 500 3.5 4.83 6.5 ±100 50 1 1.0 3.8 -55 +175 +175 -55

Applications

* Note: All data is per the IXZ1210N50L single ended device unless otherwise Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100

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IXZ12210N50L Power MOSFET IXYS Corporation

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