IXZ316N60 600V (max) Switch-Mode MOSFETS

IXYS Corporation

Description

IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ide.

📥 Download Datasheet

IXZ316N60 Datasheet Preview — Preview of IXZ316N60 PDF

Datasheet Specifications

Part number: IXZ316N60
Manufacturer: IXYS Corporation
File Size: 177.38 KB
Datasheet: IXZ316N60_IXYSCorporation.pdf
Description: 600V (max) Switch-Mode MOSFETS

Features

* VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 600 3.5
* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and p

Applications

* Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 RDS(on) PDC = =

IXZ316N60 Distributors

📁 Related Datasheet

IXZ-2020 IXZH10N50LA IXZH10N50LB IXZR16N60 IXZR16N60A IXZR16N60B

📌 All Tags

IXZ316N60 600V max Switch-Mode MOSFETS IXYS Corporation

IXYS Corporation IXZ316N60-like datasheet