* VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250µΑ VGS = ±20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 600 3.5
* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and p
IXZ316N60 Datasheet (177.38 KB)
IXZ316N60
IXYS Corporation
177.38 KB
600v (max) switch-mode mosfets.
IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ide.
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