IXZR16N60B - Z-MOS RF Power MOSFET
IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET Low CLaopwacQitgaanncde RZg-MOSTM MOSFET Process OptimHiziegdh fdovr/RdtF Operation Ideal fNoranColassescoCn,dDS, w&itEchAinpgplications VDSS ID25 = 600 V = 18 A Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 600 V 600 V RDS(on) ≤ 0.56 Ω PDC = 350 VGS VGSM Continuous Transient ±20 V ±30 V 60 S DD GS = =G 6
IXZR16N60B Features
* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power cycling capability
* IXYS advanced Z-MOS process
* Low gate charge and capacitances
* easier to drive
* faster switchi
