IXZR16N60B Datasheet - IXYS

IXZR16N60B Z-MOS RF Power MOSFET

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET N-ChaNnCnehlaEnnheal EncnehmanecnetmMeondteMSowdietch Mode RF MOSFET Low CLaopwacQitgaanncde RZg-MOSTM MOSFET Process OptimHiziegdh fdovr/RdtF Operation Ideal fNoranColassescoCn,dDS, w&itEchAinpgplications VDSS ID25 = 600 V = 18 A Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 600 V 600 V RDS(on) ≤ 0.56 Ω PDC = 350 VGS VGSM Continuous Transient ±20 V ±30 V 60 S DD GS = =G 6.

IXZR16N60B Features

* Isolated Substrate

* high isolation voltage (>2500V)

* excellent thermal transfer

* Increased temperature and power cycling capability

* IXYS advanced Z-MOS process

* Low gate charge and capacitances

* easier to drive

* faster switchi

IXZR16N60B Datasheet (163.91 KB)

IXZR16N60B Datasheet Preview — Preview of IXZR16N60B PDF

Datasheet Details

Part number:

IXZR16N60B

Manufacturer:

IXYS

File Size:

163.91 KB

Description:

Z-mos rf power mosfet.

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TAGS

IXZR16N60B Z-MOS Power MOSFET IXYS

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