DSEI20 Datasheet - IXYS

DSEI20 Fast Recovery Epitaxial Diode

Fast Recovery Epitaxial Diode (FRED) DSEI 20 IFAVM = 17 A VRRM = 1200 V trr = 40 ns VRSM V 1200 VRRM V 1200 Type DSEI 20-12A TO-220 AC AC C A A = Anode, C = Cathode C Symbol IFRMS IFAVM ÿÿx IFRM IFSM I2t TVJ TVJM Tstg Ptot Md Weight Symbol IR VF VT0 rT RthJC RthJA trr IRM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 .

DSEI20 Features

* q International standard package q Glass passivated chips q Very short recovery time q Extremely low losses at high switching frequencies q Low I -values RM q Soft recovery behaviour q Epoxy meets UL 94V-0 Applications q Antiparallel diode for high frequency switching devices q Anti saturation diode

DSEI20-IXYS.pdf