* / Advantages:
* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic
* Thin wafer technology combined wi
IXD75IF650NA Datasheet (166.04 KB)
IXD75IF650NA
IXYS
166.04 KB
Xpt igbt.
XPT IGBT Trench IGBT (medium speed) Copack Part number IXD75IF650NA IXD75IF650NA VCES I C25 VCE(sat) = = = tentative 650 V 75 A 1.5 V (G) 1 2 (C.
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