IXFA26N30X3 Datasheet - IXYS

IXFA26N30X3 Power MOSFET

X3-Class HiPERFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFY26N30X3 IXFA26N30X3 IXFP26N30X3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 300 V 300 V 20 V 30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 26 40 13 250 50 170 -55 +150 150 -55 +150 .

IXFA26N30X3 Features

* International Standard Packages

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

IXFA26N30X3 Datasheet (272.80 KB)

IXFA26N30X3 Datasheet Preview — Preview of IXFA26N30X3 PDF

Datasheet Details

Part number:

IXFA26N30X3

Manufacturer:

IXYS

File Size:

272.80 KB

Description:

Power mosfet.

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IXFA26N30X3 Power MOSFET IXYS

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