IXFI7N80P Datasheet - IXYS

IXFI7N80P Power MOSFETs

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 7N80P IXFI 7N80P IXFP 7N80P VDSS = 800 ID25 = 7 RDS(on) ≤ 1.44 t rr ≤ 250 V A Ω ns Symbol VDSS VDGR VGS V GSM ID25 IDM I AR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD M d Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ .

IXFI7N80P Features

* z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2006 IXYS All rights reserved DS99597E(08/06) IXFA7N80P IXFI7N80P IXFP7N80P Symbol g fs Ciss Cos

IXFI7N80P Datasheet (135.27 KB)