IXFN520N075T2 Datasheet - IXYS

IXFN520N075T2 TrenchT2 GigaMOS HiperFET Power MOSFET

Preliminary Technical Information www.DataSheet4U.com TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN520N075T2 VDSS ID25 = = RDS(on) ≤ 75V 480A 1.9mΩ miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pu.

IXFN520N075T2 Features

* z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 z z z z z z Mounting Torque Terminal Connection Torque International Standard Package miniBLOC, with Aluminium Nitride Isolation 175°C Operating

IXFN520N075T2_IXYS.pdf