Datasheet Specifications
- Part number
- IXFN52N90P
- Manufacturer
- IXYS Corporation
- File Size
- 132.32 KB
- Datasheet
- IXFN52N90P_IXYSCorporation.pdf
- Description
- Power MOSFET
Description
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VG.
Applications
* z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 26A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 900 3.5 6.5 ± 200 V V nA z z z z SwitchedIXFN52N90P Distributors
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