* z z t = 1min t = 1s International standard package miniBLOC, with Aluminium nitride isolation z Avalanche Rated z Low package inductance z Fast intrinsic diode Advantages z z Mounting torque Terminal connection torque Weight Low gate drive requirement High power density Applications: z Symbol
IXFN52N90P Datasheet (132.32 KB)
IXFN52N90P
IXYS Corporation
132.32 KB
Power mosfet.
Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VG.
📁 Related Datasheet
IXFN52N100X - Power MOSFET
(IXYS)
X-Class HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXFN52N100X
D
G S
S
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt
T.
IXFN520N075T2 - TrenchT2 GigaMOS HiperFET Power MOSFET
(IXYS)
Preliminary Technical Information
..
TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast I.
IXFN50N120SiC - SiC Power MOSFET
(IXYS)
SiC Power MOSFET
Part number IXFN50N120SiC
D (3) G (2)
S (1, 4)
IXFN50N120SiC
ID25
= 47 A
VDSS
= 1200 V
R = DS(on) max 50 mΩ
S G
S D
Backside: .
IXFN50N120SK - SiC Power MOSFET
(IXYS)
SiC Power MOSFET
Kelvin Source gate connection
Part number IXFN50N120SK
IXFN50N120SK
ID25
= 48 A
VDSS
= 1200 V
R = DS(on) max 50 mΩ
D (3)
KS G.
IXFN50N50 - Power MOSFET
(IXYS Corporation)
..
HiPerFETTM Power MOSFET
Single Die MOSFET
Preliminary data sheet Symbol Test Conditions
VDSS
ID25 55A 50A 55A 50A
RDS(on) 80mΩ.
IXFN50N80Q2 - PolarHT Power MOSFET
(IXYS)
HiPerFETTM Power MOSFET
..
IXFN 50N80Q2
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV / d t , Low t.
IXFN55N50 - Power MOSFET
(IXYS Corporation)
..
HiPerFETTM Power MOSFET
Single Die MOSFET
Preliminary data sheet Symbol Test Conditions
VDSS
ID25 55A 50A 55A 50A
RDS(on) 80mΩ.
IXFN55N50F - Power MOSFET
(IXYS Corporation)
HiPerRFTM
IXFN 55N50F
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, L.
