IXFN52N90P Datasheet - IXYS Corporation

IXFN52N90P Power MOSFET

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.DataSheet4U.net IXFN52N90P VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 43A 160mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C.

IXFN52N90P Features

* z z t = 1min t = 1s International standard package miniBLOC, with Aluminium nitride isolation z Avalanche Rated z Low package inductance z Fast intrinsic diode Advantages z z Mounting torque Terminal connection torque Weight Low gate drive requirement High power density Applications: z Symbol

IXFN52N90P_IXYSCorporation.pdf