IXFN52N90P Datasheet - IXYS Corporation

IXFN52N90P, Power MOSFET

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VG.

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IXFN52N90P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN52N90P

Manufacturer:

IXYS Corporation

File Size:

132.32 KB

Description:

Power MOSFET

Applications

* z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V VGS = 10V, ID = 26A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 900 3.5 6.5 ± 200 V V nA z z z z Switched

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IXFN52N90P Power MOSFET IXYS Corporation

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