IXFN55N50F Datasheet - IXYS Corporation

IXFN55N50F Power MOSFET

HiPerRFTM IXFN 55N50F Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol Test Conditions D G SS Maximum Ratings V DSS V DGR VGS VGSM I D25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg T J = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient T C = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, .

IXFN55N50F_IXYSCorporation.pdf