IXFN50N80Q2 Datasheet - IXYS

IXFN50N80Q2 PolarHT Power MOSFET

HiPerFETTM Power MOSFET www.DataSheet4U.com IXFN 50N80Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV / d t , Low trr VDSS = ID25 = RDS(on)= 800 V 50 A 0.15 Ω trr ≤ 300 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1 minute Mounting torque Terminal connection torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC.

IXFN50N80Q2 Features

* Double metal process for low gate resistance

* miniBLOC, with Aluminium nitride isolation

* Unclamped Inductive Switching (UIS) rated

* Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.

IXFN50N80Q2 Datasheet (592.64 KB)