Description
IXFN 58N50 IXFN 61N50 Preliminary Data Sheet www.DataSheet4U.com VDSS ID25 58A 61A RDS(on) 85 mΩ 75 mΩ High Current Power MOSFET N-Channel Enhance.
Features
* International standard package
* Isolation voltage 3000V (RMS)
* Low R DS (on) HDMOSTM processl
* Rugged polysilicon gate cell structure
* Low drain-to-case capacitance (
Applications
* DC choppers
* AC motor speed controls
* DC servo and robot drives
* Uninterruptible power supplies (UPS)
* Switched mode and resonant mode power supplies Advantages
* Easy to mount
* Space savings
* High power density 1 = Source 3 = D