* International standard package
* Isolation voltage 3000V (RMS)
* Low R DS (on) HDMOSTM processl
* Rugged polysilicon gate cell structure
* Low drain-to-case capacitance (
IXFN58N50 Datasheet (54.17 KB)
IXFN58N50
IXYS
54.17 KB
High current power mosfet.
IXFN 58N50 IXFN 61N50 Preliminary Data Sheet www.DataSheet4U.com VDSS ID25 58A 61A RDS(on) 85 mΩ 75 mΩ High Current Power MOSFET N-Channel Enhance.
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