* Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA 900 VDS = VGS, ID = 4 mA 3.0 V GS = ±20 V, DC V DS = 0 VDS = VDSS V =0V GS TJ = 25°C T J = 125°C VGS = 10 V, ID = 0.5
IXFT16N90Q Datasheet (203.07 KB)
IXFT16N90Q
IXYS
203.07 KB
Power mosfet.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q .
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