IXGR48N60C3D1 Datasheet - IXYS

IXGR48N60C3D1 High Speed PT IGBT

GenX3TM 600V IGBT with Diode IXGR48N60C3D1 (Electrically Isolated Back Surface) High Speed PT IGBTs for 40-100kHz Switching Symbol VCES VCGR VGES VGEM I C25 I C110 ID110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL F C Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plasti.

IXGR48N60C3D1 Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation z Avalanche Rated z Square RBSOA z Anti-Parallel Ultra Fast Diode z Fast Switching z International Standard Package Advantages z High Power Density z Low Gate Drive R

IXGR48N60C3D1-IXYS.pdf