* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation z Avalanche Rated z Square RBSOA z Anti-Parallel Ultra Fast Diode z Fast Switching z International Standard Package Advantages z High Power Density z Low Gate Drive R
IXGR48N60C3D1 Datasheet (214.35 KB)
IXGR48N60C3D1
IXYS
214.35 KB
High speed pt igbt.
GenX3TM 600V IGBT with Diode
IXGR48N60C3D1
(Electrically Isolated Back Surface)
High Speed PT IGBTs for 40-100kHz Switching
Symbol VCES VCGR
VGES .
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