IXTA110N12T2 Power MOSFET

IXYS

Description

TrenchT2TM Power MOSFET Advance Technical Information IXTA110N12T2 IXTP110N12T2 VDSS = 120V ID25 = 110A RDS(on)  14m N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: IXTA110N12T2
Manufacturer: IXYS
File Size: 212.52 KB
Datasheet: IXTA110N12T2-IXYS.pdf
Description: Power MOSFET

Features

* International Standard Packages
* 175°C Operating Temperature
* Avalanche Rated
* Low RDS(on)
* Fast Intrinsic Rectifier
* High Current Handling Capability Advantages
* Easy to Mount
* Space Savings

Applications

* Synchronous Rectification
* DC/DC Converters and Off-Line UPS
* Primary- Side Switch
* High Current Switching Applications © 2017 IXYS CORPORATION, All Rights Reserved DS100830A(5/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5

IXTA110N12T2 Distributors

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IXTA110N12T2 Power MOSFET IXYS

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