IXTA42N15T
IXYS
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IXTA42N15T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IXTA42N15T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 45mΩ@VGS=10V ·Fully characterized avalanche volta.
IXTA42N25P - Power MOSFET
(IXYS Corporation)
PolarHTTM Power MOSFET
IXTA 42N25P IXTP 42N25P IXTQ 42N25P
VDSS =
ID25 = ≤ RDS(on)
250 42 84
V A mΩ
N-Channel Enhancement Mode Avalanche Rated
T.
IXTA44P15T - Power MOSFET
(IXYS)
TrenchPTM Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
TO-263 AA (IXTA) TO-220AB (IXTP)
IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T
VDSS.
IXTA460P2 - Power MOSFET
(IXYS)
PolarP2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-263 AA (IXTA)
IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2
TO-22.
IXTA460P2 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 270mΩ@VGS=10V ·Fully characterized avalanche voltage and curr.
IXTA48N20T - Power MOSFET
(IXYS)
TrenchTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXTA48N20T IXTP48N20T IXTQ48N20T
Symbol VDSS VDGR VGSM ID2.
IXTA48N20T - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 50mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
IXTA48P05T - Power MOSFET
(IXYS)
TrenchPTM Power MOSFETs
Preliminary Technical Information
IXTY48P05T IXTA48P05T IXTP48P05T
VDSS = ID25 = ≤RDS(on)
- 50V - 48A
30mΩ
P-Channel Enha.
IXTA48P05T - P-Channel MOSFET
(INCHANGE)
isc P-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤30mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for .
IXTA4N60P - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 2.0Ω@VGS=10V ·Fully characterized avalanche voltage and curre.