IXTH02N450HV - High Voltage Power MOSFET
High Voltage Power MOSFET IXTT02N450HV IXTH02N450HV VDSS I D25 RDS(on) = 4500V = 200mA 625 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque TO-268HV TO-247HV Maximum Ratings 4500 V 4500 V 20 V 30 V 200 mA 600.
IXTH02N450HV Features
* High Blocking Voltage
* High Voltage Packages
Advantages
* Easy to Mount
* Space Savings
* High Power Density
Applications
* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
* Laser and X-Ray Generation Systems
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